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| Datasheet File OCR Text: |
| NTE132 Silicon N-Channel JFET Transistor VHF Amplifier, Mixer Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +260C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Gate-Source Breakdown Voltage Gate Reverse Current Symbol Test Conditions Min -25 - - - -0.5 2 2500 2000 - Typ - - - - - - - - - Max - -2 -2 -8 -7.5 20 7000 - 50 Unit V nA nA V V mA mho mho mho V(BR)GSS IG = 1A, VDS = 0 IGSS VGS(off) VGS IDSS gfs |yfs| |yos| VGS = 15V, VDS = 0 VGS = 15V, VDS = 0, TA = +100C Gate-Source Cutoff Voltage Gate-Source Voltage Zero-Gate-Voltage Drain Current Forward Transconductance Forward Transfer Admittance Output Admittance ID = 2nA, VDS = 15V ID = 50A, VDS = 15V VDS = 15V, VGS = 0 VDS = 15V, VGS = 0, f = 1kHz VDS = 15V, VGS = 0, f = 100MHz VDS = 15V, VGS = 0, f = 1kHz .207 (5.28) Dia .060 (1.52) Min .180 (4.57) Seating Plane .500 (12.7) Min .018 (0.45) .100 (2.54) Dia Drain Source Gate |
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